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Single Crystal GaAs Ingot
单晶砷化鎵晶体
Crystal Materials 晶体材料 |
Single Crystal Gallium Arsenide, VGF / LEC grown, 高纯单晶
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Crystal Orientation |
(1 0 0) / (1 1 1) |
Dopant 掺杂 |
Undoped / Zn |
Si / Te |
Diameter 直径 |
50.8 ± 0.25mm / 76.2± 0.25mm / 100.0 ± 0.4mm |
Orientation 晶向 |
（ 100 ） α 0 ±β 0 , off angle α and accuracy β upon request |
Resistivity 电阻率 |
(1-30)x10 7 Ω.cm |
(1-10)x10 -3 Ω.cm |
Mobility 迁移率 |
≥ 5000 cm2 / V·sec |
N / A |
Carrier Concentration 掺杂浓度 |
N / A |
(0.1-3.0)×10 18 /cm3 |
Etch Pit Density 腐蚀缺陷密度 |
≤ 5·10 3cm-2 /7·10 4cm-2 |
≤ 5·10 2 cm -2 |
Orientation(OF) Flat, EJ / US 主定位边 |
(0-1-1)±0.5deg, 16 ±1.0mm /22±1.0mm/32.5±1.0mm |
Identification(IF) Flat, EJ / US 次定位边 |
(0-1 1) )±5.0 deg, 8 ±1.0mm / 11±1.0mm/ 18±1.0mm |
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