Crystal Materials 晶体材料 |
Single Crystal Germanium, VGF /LEC grown, 高纯单晶 |
Crystal Orientation |
(1 0 0) / (1 1 1) |
Dopant 掺杂 |
Ga |
Sb / As |
Diameter 直径 |
50.8 ± 0.25mm / 76.2± 0.25mm / 100.0 ± 0.4mm |
Thickness 厚度 |
325 ± 25um / 425 ± 25um / 500 ± 25um |
Orientation 晶向 |
（ 100 ） α 0 ±β 0 , off angle α and accuracy β upon request |
Resistivity 电阻率 |
0.8-40 Ω.cm |
0.25-50 Ω.cm |
Mobility 迁移率 |
≥ 3000 cm 2 / V·sec |
N / A |
Carrier Concentration 掺杂浓度 |
N / A |
(0.1-3.0)×10 18 /cm 3 |
Etch Pit Density 腐蚀缺陷密度 |
≤ 2·10 3 cm -2 |
≤ 5·10 2 cm -2 |
Orientation(OF) Flat, EJ / US 主定位边 |
(0-1-1)±0.5 deg, 16±1.0mm /22±1.0mm/32.5±1.0mm |
Identification(IF) Flat, EJ / US 次定位边 |
(0-1 1) )±5.0 deg, 8±1.0mm / 11±1.0mm /18±1.0mm |
Front Side Surface 正面 |
Polished in Epi-ready Prime grade, 外延生长级抛光 |
Backside Surface 反面 |
Polished / Lapping or etched, 抛光 / 研磨或腐蚀 |
Packaging 包装 |
N2 filled ， cassette / fluoroware, 25pcs / single piece, 100级洁净室真空冲氮包装,25片卡盒/单片币式 |
