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EPi-Ready Polished Sapphire Substrate
蓝宝石基片, 开盒即用外延生长级抛光
| Crystal Materials 晶体材料 |
99.995% High Purity, 2-3 Grade Monocrystalline Al2O3, 高纯单晶 |
| Wafer Surface Orientation 晶向 |
C-axis(0001) offset to M (1-100) / A (11-20) 0.2°±0.05° / 0.3°±0.1° / ±0.25° |
| Diameter 直径 |
50.8mm ± 0.1mm / 76.2mm ± 0.25mm / 100.0 ± 0.40mm
/ 125.0 ± 0.3mm
/ 150.0 ± 0.3mm
|
| Thickness 厚度 |
330um ± 15um |
430um ± 10um |
500um ± 10um |
| Major Flat 定位边 |
A-axis (1 1-2 0) ± 0.2° 方向 |
| Major Flat Length |
16.0mm ± 1.0mm / 22.0mm ± 1.0mm / 32.5 ± 1.0mm
/ 47.5 ± 2.5mm 长度 |
| Minor 次定位边 |
None 无 |
| Front Surface Finish 正面状态 |
Epi-ready polished 外延生长级抛光, Ra< 0.2nm |
| Back Surface 反面 |
SSP 单面: Fine ground 精研磨, Ra 0.4 to 1.0 um; DSP 双面: Polished
抛光 |
| Edge condition 边 |
Edge defects not to exceed SEMI M3-91, 符合 SEMI M3-91 |
| TTV 厚度变化 |
<15um |
<10um |
<10um |
| BOW 挠度 |
<15um |
<10um |
<10um |
| Warp 弯曲 |
<15um |
<10um |
<10um |
| Bubble & Color 微气孔及色泽 |
None by visual inspection in intensive light 强光灯下不可见 |
| Ground Boundary 晶界 |
None by visual inspection in fluorescent light 日光灯下不可见 |
| Cleanliness 清洗 |
Free visible contamination 无见任何可见杂物 |
| Packaging 包装 |
Packaged in a class 100 clean room environment, in cassettes of 25pcs or single fluroware, under a nitrogen atmosphere. 100级洁净室真空冲氮包装,25片卡盒/单片币式 |
| Note 备注 |
R-plane (1-1 0 2), A-plane (1 1-2 0 ), and M-plane(1-1 0 0) are available; Customer's specification not listed above is also available upon request. 同时我们生产R-面,A-面和M-面蓝宝石基片;我们接受客户的特殊规格的定货
|
Our Sapphire Crystal Materilas and Epi-ready Wafers Testing Results:
1. High-Resolution X-Ray Different (Philip X'Pert Pro)
FWHM （半波峰宽）＝0.0044°＝15.84 Arc.sec （弧度·秒）
(Typical Sapphire Crystal Material, C-plane 0.2°±0.05°off towards M)
2. AFM (Atomic Force Microscopy, SPA-300HV)
Ra = 0.063nm, RMS = 0.081nm (10um x10um)
(Typical Epi-Ready Polished Sapphire Front Surface) |
